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Proceedings Paper

Fermi level effect on strain of Si-doped GaN
Author(s): Jinqiao Xie; Seiji Mita; Ramón Collazo; Anthony Rice; James Tweedie; Zlatko Sitar
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Paper Abstract

Using high resolution X-ray diffraction and Hall effect measurements, we found that the tensile strain caused by dislocation inclination in Si doped GaN became immeasurable when carbon co-doping was used to compensate the free carriers. This result suggested that the tensile strain is related to free carrier concentration instead of Si concentration. Such an effect could be explained by the Fermi level effect on the dislocation climb at the growth surface mediated by Ga vacancies, whose concentration is strongly influenced by the Fermi level position. At a high electron carrier concentration, the formation energy of Ga vacancies is low and Ga vacancy concentration is high. Therefore, the dislocation climb-rate is enhanced, which results in a higher tensile strain. This phenomenon is similar to the wellknown Fermi level effect on Ga vacancy governed diffusion in the GaAs system.

Paper Details

Date Published: 3 March 2011
PDF: 8 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79390B (3 March 2011); doi: 10.1117/12.878726
Show Author Affiliations
Jinqiao Xie, HexaTech, Inc. (United States)
Seiji Mita, HexaTech, Inc. (United States)
Ramón Collazo, North Carolina State Univ. (United States)
Anthony Rice, North Carolina State Univ. (United States)
James Tweedie, North Carolina State Univ. (United States)
Zlatko Sitar, North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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