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Proceedings Paper

Etching formation of GaN micro optoelectronic device array
Author(s): Qian Fan; Frank Lee; Kameshwar Yadavalli; Michael S. Lee; Chih-Li Chuang; Hussein El-Ghoroury
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Paper Abstract

GaN based micro emitter optoelectronic device array has been proved to be the core component for wide variety of applications such as microdisplay, biosensor, projection etc. Etching is one of the key steps to form the GaN micro emitter array device, including inductively coupled plasma (ICP) dry etch and alkaline solution wet etch. This paper reports the recent progress made by Ostendo Technologies Inc in fabricating the ultra-high density, large aspect-ratio etching formed monolithic GaN micro emitter optoelectronic device array. The unit density reaches 1M per cm2, with good uniformity across the whole wafer. Perpendicular etching sidewall was achieved, with smooth surface roughness which is significance feature used for laser diodes (LDs) device.

Paper Details

Date Published: 10 March 2011
PDF: 6 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793913 (10 March 2011); doi: 10.1117/12.878579
Show Author Affiliations
Qian Fan, Ostendo Technologies, Inc. (United States)
Frank Lee, Ostendo Technologies, Inc. (United States)
Kameshwar Yadavalli, Ostendo Technologies, Inc. (United States)
Michael S. Lee, Ostendo Technologies, Inc. (United States)
Chih-Li Chuang, Ostendo Technologies, Inc. (United States)
Hussein El-Ghoroury, Ostendo Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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