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Proceedings Paper

Relationships between EUV resist outgassing and contamination deposition at Selete
Author(s): Hiroaki Oizumi; Kazuyuki Matsumaro; Satoshi Nomura; Julius Joseph Santillan; Toshiro Itani; Takeo Watanabe; Naohiro Matsuda; Tetsuo Harada; Hiroo Kinoshita
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Paper Abstract

This presentation summarizes the relationships between resist outgassing and contamination deposition for EUV resists, in the case of EUV irradiation with high illumination intensity (>100mW/cm2). These relationships were obtained by determining the resist outgassing species by gas chromatography-mass spectroscopy (GC-MS) and the contamination on optical elements by witness sample testing.

Paper Details

Date Published: 8 April 2011
PDF: 6 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796921 (8 April 2011); doi: 10.1117/12.878571
Show Author Affiliations
Hiroaki Oizumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kazuyuki Matsumaro, Semiconductor Leading Edge Technologies, Inc. (Japan)
Satoshi Nomura, Semiconductor Leading Edge Technologies, Inc. (Japan)
Julius Joseph Santillan, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takeo Watanabe, Univ. of Hyogo (Japan)
Naohiro Matsuda, Univ. of Hyogo (Japan)
Tetsuo Harada, Univ. of Hyogo (Japan)
Hiroo Kinoshita, Univ. of Hyogo (Japan)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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