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Proceedings Paper

Guided self-assembly of block-copolymer for CMOS technology: a comparative study between grapho-epitaxy and surface chemical modification
Author(s): Lorea Oria; Alaitz Ruiz de Luzuriaga; Xavier Chevalier; Juan A. Alduncin; David Mecerreyes; Raluca Tiron; Stephanie Gaugiran; Francesc Perez-Murano
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Paper Abstract

Recent progress in Block Copolymer lithography has shown that guided self-assembly is a viable alternative for pushing forward the resolution limits of optical lithography. The main two self assembly methods considered so far have been the surface chemical modification, which is based on the chemical modification of a brush grafted to the silicon, and the grapho-epitaxy, which is based on creating topographic patterns on the surface. We have tested these two approaches for the 22 nm node and beyond CMOS technology, using PS-PMMA block copolymers synthesized by RAFT (Reversible Addition-Fragmentation Chain Transfer) polymerization.

Paper Details

Date Published: 2 April 2011
PDF: 10 pages
Proc. SPIE 7970, Alternative Lithographic Technologies III, 79700P (2 April 2011); doi: 10.1117/12.878486
Show Author Affiliations
Lorea Oria, Microelectronic Institute of Barcelona (Spain)
Alaitz Ruiz de Luzuriaga, CIDETEC (Spain)
Xavier Chevalier, CEA-LETI (France)
Juan A. Alduncin, CIDETEC (Spain)
David Mecerreyes, CIDETEC (Spain)
Raluca Tiron, CEA-LETI (France)
Stephanie Gaugiran, CEA-LETI (France)
Francesc Perez-Murano, Microelectronic Institute of Barcelona (Spain)


Published in SPIE Proceedings Vol. 7970:
Alternative Lithographic Technologies III
Daniel J. C. Herr, Editor(s)

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