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Proceedings Paper

Structural characterization of III-nitride materials and devices
Author(s): David J. Smith; Lin Zhou; T. D. Moustakas
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Paper Abstract

The electron microscope provides a wide range of techniques that are very well suited for structural characterization of nanophotonic materials and devices. High-resolution electron microscopy (defect identification and strain field analysis), Z-contrast imaging in the scanning transmission electron microscope (cation distribution), convergent-beam electron diffraction (local lattice parameter and strain), and off-axis electron holography (internal electrostatic fields), represent powerful complementary approaches for distinguishing between the often-competing effects of growth conditions and compositional differences. These various TEM techniques have been used separately or in tandem in our recent collaborative studies of III-nitride heterostructures and nanostructures, where lattice mismatch, compositional inhomogeneities and phase separation were all important considerations that can possibly impair the structural quality of the final material and/or device. Representative applications that illustrate the prospects and some of the problems include the following: i) relaxed InN quantum dots; ii) deep-UV-emitting AlGaN quantum wells; iii) near-UV light-emitting diodes based on InN/GaN quantum wells; and iv) blue-green LEDs based on GaN quantum-dot superlattices.

Paper Details

Date Published: 24 January 2011
PDF: 6 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451E (24 January 2011); doi: 10.1117/12.877470
Show Author Affiliations
David J. Smith, Arizona State Univ. (United States)
Lin Zhou, Arizona State Univ. (United States)
T. D. Moustakas, Boston Univ. (United States)


Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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