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Proceedings Paper

Two-dimensional drift-diffusion simulation of GaN HFETs
Author(s): Qian Fan; Hadis Morkoç
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Paper Abstract

The electron transport properties of AlGaN/GaN heterojunction field effect transistors (HFETs) were studied by two-dimensional drift-diffusion (DD) modeling method. The model performs self-consistent numerical computation on the Poisson equation, carrier statistics and current and continuity equations. The spontaneous and piezoelectircal polarization charges uniquely for GaN material was taken into account, which influences significantly the electron distribution and current density. Sliced 1D Schrödinger equation along c direction was solved to obtain electron distribution. The electrical field at the 2DEG channel was found to have a peak position locates at the gate edge towards the drain side, reaching 106 V/cm at high bias condition. The surface potential boundary conditions also were found to have profound influence to the simulation results.

Paper Details

Date Published: 10 March 2011
PDF: 8 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391O (10 March 2011); doi: 10.1117/12.877336
Show Author Affiliations
Qian Fan, Ostendo Technologies, Inc. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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