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Proceedings Paper

Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template
Author(s): Cheng-Yu Chen; Li-Han Siao; Jen-Inn Chyi; Chih-Kang Chao; Chih-Hung Wu
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Paper Abstract

Indium doped ZnO films have been successfully deposited on high resistivity GaN(0001) templates by plasma-assisted molecular beam epitaxy. N-type ZnO with carrier concentration of 4.35x1020 cm-3 and electron mobility of 5.7 cm/V-s, leading to resistivity of 2.6x10-3 Ω-cm, are measured by Hall measurements. Under low indium doping flux, the carrier concentration increases accordingly with indium cell temperature until a max concentration is achieved as it might reach the In solubility. Further increase in doping flux leads to lower carrier concentration. X-ray diffraction spectra also show the degraded crystal quality as In doping concentration increases. Low temperature photoluminescence indicates that donor bound excitons dominate the emission while deep level emissions are not present in our In-doped ZnO films.

Paper Details

Date Published: 3 March 2011
PDF: 5 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392J (3 March 2011); doi: 10.1117/12.877210
Show Author Affiliations
Cheng-Yu Chen, National Central Univ. (Taiwan)
Li-Han Siao, National Central Univ. (Taiwan)
Jen-Inn Chyi, National Central Univ. (Taiwan)
Research Ctr. for Applied Sciences (Taiwan)
Chih-Kang Chao, Institute of Nuclear Energy Research (Taiwan)
Chih-Hung Wu, Institute of Nuclear Energy Research (Taiwan)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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