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Proceedings Paper

High peak power picoseconds optical pulse generation from GaInN semiconductor diode lasers
Author(s): Rintaro Koda; Tomoyuki Oki; Takao Miyajima; Hideki Watanabe; Shunsuke Kono; Masaru Kuramoto; Masao Ikeda; Hiroyuki Yokoyama
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Paper Abstract

We present optical pulse generation with 100 W peak power, 3 ps temporal duration, and 1 GHz repetition from a GaInN master oscillator power amplifier (MOPA). An external cavity GaInN laser diode is passively mode-locked to generate 4 W peak power optical pulses as a master oscillator, and a semiconductor optical amplifier (SOA) effectively amplified these to a high peak power of more than 100 W. Two major factors that contributed to effective amplification of optical pulses were the generation of clean optical pulses without sub-pulse components by the GaInN mode-locked laser diode and suppression of amplified spontaneous emission in the SOA. This novel high-peak-power pulse source is used to induce multi-photon absorption to create sub-micrometer recording marks in a bulk plastic recording media. The realization of an all-semiconductor pulse source is a significant breakthrough towards a practical 3D optical data storage system.

Paper Details

Date Published: 16 February 2011
PDF: 7 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530J (16 February 2011); doi: 10.1117/12.877030
Show Author Affiliations
Rintaro Koda, Tohoku Univ. (Japan)
Sony Corp. (Japan)
Tomoyuki Oki, Sony Corp. (Japan)
Takao Miyajima, Tohoku. Univ. (Japan)
Sony Corp. (Japan)
Hideki Watanabe, Sony Corp. (Japan)
Shunsuke Kono, Tohoku Univ. (Japan)
Masaru Kuramoto, Tohoku Univ. (Japan)
Sony Corp. (Japan)
Masao Ikeda, Tohoku Univ. (Japan)
Sony Corp. (Japan)
Hiroyuki Yokoyama, Tohoku Univ. (Japan)


Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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