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Proceedings Paper

Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment
Author(s): H. T. Duc; M. Pochwala; J. Förstner; T. Meier; S. Priyadarshi; A. M. Racu; K. Pierz; U. Siegner; M. Bieler
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Paper Abstract

We experimentally and theoretically investigate injection currents generated by femtosecond single-color circularly-polarized laser pulses in (110)-oriented GaAs quantum wells. The current measurements are performed by detecting the emitted Terahertz radiation at room temperature. The microscopic theory is based on a 14 x 14 k • p band-structure calculation in combination with the multi-subband semiconductor Bloch equations. For symmetric GaAs quantum wells grown in (110) direction, an oscillatory dependence of the injection currents on the exciting photon energy is obtained. The results of the microscopic theory are in good agreement with the measurements.

Paper Details

Date Published: 21 February 2011
PDF: 8 pages
Proc. SPIE 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 79370U (21 February 2011); doi: 10.1117/12.876972
Show Author Affiliations
H. T. Duc, Univ. Paderborn (Germany)
M. Pochwala, Univ. Paderborn (Germany)
J. Förstner, Univ. Paderborn (Germany)
T. Meier, Univ. Paderborn (Germany)
S. Priyadarshi, Physikalisch-Technische Bundesanstalt (Germany)
A. M. Racu, Physikalisch-Technische Bundesanstalt (Germany)
K. Pierz, Physikalisch-Technische Bundesanstalt (Germany)
U. Siegner, Physikalisch-Technische Bundesanstalt (Germany)
M. Bieler, Physikalisch-Technische Bundesanstalt (Germany)

Published in SPIE Proceedings Vol. 7937:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV
Kong-Thon Tsen; Jin-Joo Song; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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