Share Email Print

Proceedings Paper

Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The epitaxial lateral overgrowth (ELO) gallium nitride (GaN) was grown with high fill factor using metal organic chemical vapor deposition (MOCVD). The inductively coupled plasma (ICP) etching of ELO-GaN based on Cl2/Ar/SiCl4 gas mixture was performed. Surface properties of ELO-GaN subjected to ICP etching have been investigated and optimized etching condition in ELO-GaN with ICP etching is presented. Radiofrequency (RF) power and the flow rate of Cl2 gas were modified during the experiments. The window region, wing region and the edge region of ELO-GaN pattern present different etching characteristics. Different etching conditions were studied to get the minimized plasma-induced damage, relatively high etching rates, and excellent surface profiles. Etch depths of the etched ELO-GaN with smooth surface up to about 19 μm were achieved. The most suitable three-step etching condition is discussed with the assessment based on the morphology observation of the etched surface of ELO-GaN patterns.

Paper Details

Date Published: 3 March 2011
PDF: 7 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793920 (3 March 2011); doi: 10.1117/12.876870
Show Author Affiliations
Haiyong Gao, Virginia Commonwealth Univ. (United States)
Jaesoong Lee, Virginia Commonwealth Univ. (United States)
Xianfeng Ni, Virginia Commonwealth Univ. (United States)
Jacob Leach, Virginia Commonwealth Univ. (United States)
Ümit Özgür, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

© SPIE. Terms of Use
Back to Top