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Proceedings Paper

Enhancement in light extraction efficiency of GaN-based vertical light-emitting diodes by AgCu-based reflectors
Author(s): Tak Jeong; Seung Whan Kim; Jong Hyeob Baek
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Paper Abstract

Indium-tin-oxide (ITO)/Ni/AgCu/Pt reflectors for high-performance GaN-based vertical light-emitting diodes (VLEDs) were investigated. The ITO layer was first annealed at 650 °C in air to make an Ohmic contact and then the Ni/AgCu/Pt reflectors were deposited and subsequently annealed at 400 °C in air to improve their reflectance and mechanical adhesion with the ITO layer. It was shown that the reflectance of the ITO/Ni/AgCu/Pt reflectors at 460nm was slightly increased from 82 to 87% after second annealing. Based on the secondary ion mass spectrometry depth profiles, this improvement was attributed to the formation of a transparent Ni-oxide and the existence of Cu atoms near ITO/AgCu/Pt interface regions suppressing the inter and out-diffusion of Ag. The VLEDs fabricated with the ITO/Ni/AgCu/Pt reflectors showed an approximately 4.4% higher output power and much better current-voltage characteristics than those with the Ag-based reflectors.

Paper Details

Date Published: 4 March 2011
PDF: 6 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391Z (4 March 2011); doi: 10.1117/12.876845
Show Author Affiliations
Tak Jeong, Korea Photonics Technology Institute (Korea, Republic of)
Seung Whan Kim, Korea Photonics Technology Institute (Korea, Republic of)
Jong Hyeob Baek, Korea Photonics Technology Institute (Korea, Republic of)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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