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Proceedings Paper

Single-grain Si TFTs for high-speed flexible electronics
Author(s): Ryoichi Ishihara; Tao Chen; Michiel van der Zwan; Ming He; H. Schellevis; Kees Beenakker
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Paper Abstract

Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct formation of high speed Si circuits fabricated with a plastic compatible temperature. Large Si grains with a diameter of 4 microns were formed on predetermined positions by a pulsed laser crystallization process with a plastic compatible temperature. High performance transistors were fabricated inside a single Si grain.

Paper Details

Date Published: 3 February 2011
PDF: 9 pages
Proc. SPIE 7956, Advances in Display Technologies; and E-papers and Flexible Displays, 795605 (3 February 2011); doi: 10.1117/12.876649
Show Author Affiliations
Ryoichi Ishihara, Delft Univ. of Technology (Netherlands)
Tao Chen, Delft Univ. of Technology (Netherlands)
Michiel van der Zwan, Delft Univ. of Technology (Netherlands)
Ming He, Delft Univ. of Technology (Netherlands)
H. Schellevis, Delft Univ. of Technology (Netherlands)
Kees Beenakker, Delft Univ. of Technology (Netherlands)


Published in SPIE Proceedings Vol. 7956:
Advances in Display Technologies; and E-papers and Flexible Displays
Karlheinz Blankenbach; Liang-Chy Chien; Sin-Doo Lee; Ming Hsien Wu, Editor(s)

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