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Proceedings Paper

Modulation effects in multi-section semiconductor lasers
Author(s): Nicholas G. Usechak; Matt Grupen; Nader Naderi; Yan Li; Luke F. Lester; Vassilios Kovanis
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Paper Abstract

The current modulation of a two-section semiconductor laser is first reviewed analytically using a well-known, closed-form, modulation expression. A system of traveling-intensity equations is then used to investigate spatial effects in these lasers including cavity layout and the role played by cavity length. The numerical simulations verify the accuracy of the analytic expression for short cavities (low frequencies) but identify shortcomings as the cavity length (modulation frequency) is increased. One notable difference is the presence of resonant peaks in the modulation response. Although this effect has been addressed in the past, the arrangement of sections within the laser is shown to play a prominent role in these monolithic devices for what we believe to be the first time. In the course of this investigation the thirteen different ways a two-section semiconductor laser can be current modulated are identified and computationally investigated.

Paper Details

Date Published: 21 February 2011
PDF: 11 pages
Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 79331I (21 February 2011); doi: 10.1117/12.876513
Show Author Affiliations
Nicholas G. Usechak, Air Force Research Lab. (United States)
Matt Grupen, Air Force Research Lab. (United States)
Nader Naderi, The Univ. of New Mexico (United States)
Yan Li, The Univ. of New Mexico (United States)
Luke F. Lester, The Univ. of New Mexico (United States)
Vassilios Kovanis, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 7933:
Physics and Simulation of Optoelectronic Devices XIX
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Alexandre Freundlich, Editor(s)

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