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Proceedings Paper

Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers
Author(s): S. Shutts; G. Edwards; S. N. Elliott; P. M. Smowton; A. B. Krysa
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Paper Abstract

By optimising an InP/AlGaInP quantum dot size distribution a broad and relatively flat topped gain spectra can be achieved. Using the segmented contact method we measure the optical gain spectra and use this to explain the range of lasing wavelengths that can obtained by varying the grating structure of deep etched DBR lasers. We describe the optimisation of a simple single stage ICP etch process suitable for producing anisotropic microstructures in this material system and the resulting deep-etched DBR lasers. Measurements of emission wavelength made between 220 and 320 K on a ridge laser, fabricated with cleaved facets, reveals a temperature dependence on of 0.14 nm/K. DBR structures have been used to improve this behaviour, with a dependence of peak wavelength with temperature of 0.07 nm/K, over the same temperature range. Measurements on a 4 μm wide DBR ridge laser show they can be operated up to 17 nm from the peak emission of a ridge laser operating at the same current density.

Paper Details

Date Published: 17 February 2011
PDF: 9 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 795308 (17 February 2011); doi: 10.1117/12.876454
Show Author Affiliations
S. Shutts, Cardiff Univ. (United Kingdom)
G. Edwards, Cardiff Univ. (United Kingdom)
S. N. Elliott, Cardiff Univ. (United Kingdom)
P. M. Smowton, Cardiff Univ. (United Kingdom)
A. B. Krysa, The Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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