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Proceedings Paper

Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers
Author(s): Chih-Ciao Yang; Jinn-Kong Sheu; Min-Shun Huang; Shang-Ju Tu; Feng-Wen Huang; Kuo-Hua Chang; Ming-Lun Lee; Wei-Chih Lai
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Paper Abstract

In this study, hetero-structure p-i-n type epitaxy wafers were deposited on the GaN/sapphire templates with different buffer layers by the MOVPE system. The absorption layers sandwiched in top p-GaN and bottom n+-GaN layers were designed into different short-period InGaN/GaN superlattice structures with specific pair numbers to maintain a total absorption thickness of 200 nm. As the buffer layer was properly adjusted, the VOC and JSC were enhanced by 35% and 95%, respectively. In addition to material qualities, the thickness of GaN buffer layers and piezoelectric-induced stain in the InGaN film itself also influenced the PV device performance.

Paper Details

Date Published: 4 March 2011
PDF: 7 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391J (4 March 2011); doi: 10.1117/12.876366
Show Author Affiliations
Chih-Ciao Yang, National Cheng Kung Univ. (Taiwan)
Jinn-Kong Sheu, National Cheng Kung Univ. (Taiwan)
Min-Shun Huang, National Cheng Kung Univ. (Taiwan)
Shang-Ju Tu, National Cheng Kung Univ. (Taiwan)
Feng-Wen Huang, National Cheng Kung Univ. (Taiwan)
Kuo-Hua Chang, National Cheng Kung Univ. (Taiwan)
Ming-Lun Lee, National Cheng Kung Univ. (Taiwan)
Southern Taiwan Univ. of Technology (Taiwan)
Wei-Chih Lai, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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