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Proceedings Paper

1/f Noise in Schottky diodes
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Paper Abstract

The physics and the engineering formulas of 1/f noise in ErAs-based all-epitaxial, GaN-based, and other types of Schottky diodes are presented in a way related to the general pn junction quantum 1/f noise formulas developed by the author and van der Ziel earlier, but with inclusion of the image force contribution of an electron at the metal-semiconductor interface. On this base the phase noise introduced by mixers constructed with the ErAs Schottky diodes was also studied and can now be calculated analytically with the Quantum 1/f effect formulas.

Paper Details

Date Published: 9 March 2011
PDF: 9 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391S (9 March 2011); doi: 10.1117/12.876254
Show Author Affiliations
Peter H. Handel, Univ. of Missouri-St. Louis (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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