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Proceedings Paper

Design of simultaneous bidirectional CMOS transceiver with a resistor-transconductor hybrid for optical chip-to-chip interconnects
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Paper Abstract

A simultaneous bidirectional CMOS transceiver for full duplex chip-to-chip optical interconnects is proposed, utilizing a resistor-transconductor (R-gm) hybrid. The hybrid separates the inbound signal from the input/output compound signal. The simultaneous bidirectional CMOS transceiver is designed in a 0.18 μm Si-CMOS technology, with power dissipation of 79 mW and 54.4 mW for the transmitter and receiver, respectively. It shows a 3-dB bandwidth of 4.6 GHz for both the transmitter and the receiver with a 3-dB gain of 26.6 dB and 10.6 dB, respectively, in full-duplex mode.

Paper Details

Date Published: 21 February 2011
PDF: 8 pages
Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 79332N (21 February 2011); doi: 10.1117/12.876170
Show Author Affiliations
Ikechi Augustine Ukaegbu, KAIST (Korea, Republic of)
Jamshid Sangirov, KAIST (Korea, Republic of)
Trong-Hieu Ngo, KAIST (Korea, Republic of)
Tae-Woo Lee, KAIST (Korea, Republic of)
Hyo-Hoon Park, KAIST (Korea, Republic of)

Published in SPIE Proceedings Vol. 7933:
Physics and Simulation of Optoelectronic Devices XIX
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Alexandre Freundlich, Editor(s)

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