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Proceedings Paper

Properties of implanted and CVD incorporated nitrogen-vacancy centers: preferential charge state and preferential orientation
Author(s): K.-M. C. Fu; C. Santori; P. E. Barclay; A. Faraon; D. J. Twitchen; M. L. Markham; R. G. Beausoleil
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Paper Abstract

The combination of the long electron state spin coherence time and the optical coupling of the ground electronic states to an excited state manifold makes the nitrogen-vacancy (NV) center in diamond an attractive candidate for quantum information processing. To date the best spin and optical properties have been found in centers deep within the diamond crystal. For useful devices it will be necessary to engineer NVs with similar properties close to the diamond surface. We report on properties including charge state control and preferential orientation for near surface NVs formed either in CVD growth or through implantation and annealing.

Paper Details

Date Published: 12 February 2011
PDF: 7 pages
Proc. SPIE 7948, Advances in Photonics of Quantum Computing, Memory, and Communication IV, 79480S (12 February 2011); doi: 10.1117/12.876169
Show Author Affiliations
K.-M. C. Fu, Hewlett-Packard Labs. (United States)
Univ. of Washington (United States)
C. Santori, Hewlett-Packard Labs. (United States)
P. E. Barclay, Hewlett-Packard Labs. (United States)
Univ. of Calgary (Canada)
National Institute for Nanotechnology (Canada)
A. Faraon, Hewlett-Packard Labs. (United States)
D. J. Twitchen, Element Six Ltd. (United Kingdom)
M. L. Markham, Element Six Ltd. (United Kingdom)
R. G. Beausoleil, Hewlett-Packard Labs. (United States)

Published in SPIE Proceedings Vol. 7948:
Advances in Photonics of Quantum Computing, Memory, and Communication IV
Zameer Ul Hasan; Philip R. Hemmer; Hwang Lee; Charles M. Santori, Editor(s)

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