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Proceedings Paper

High reliability and high performance of 9xx-nm single emitter laser diodes
Author(s): L. Bao; P. Leisher; J. Wang; M. Devito; D. Xu; M. Grimshaw; W. Dong; X. Guan; S. Zhang; C. Bai; J. G. Bai; D. Wise; R. Martinsen
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Paper Abstract

Improved performance and reliability of 9xx nm single emitter laser diodes are presented. To date, over 15,000 hours of accelerated multi-cell lifetest reliability data has been collected, with drive currents from 14A to 18A and junction temperatures ranging from 60°C to 110°C. Out of 208 devices, 14 failures have been observed so far. Using established accelerated lifetest analysis techniques, the effects of temperature and power acceleration are assessed. The Mean Time to Failure (MTTF) is determined to be >30 years, for use condition 10W and junction temperature 353K (80°C), with 90% statistical confidence.

Paper Details

Date Published: 21 February 2011
PDF: 12 pages
Proc. SPIE 7918, High-Power Diode Laser Technology and Applications IX, 791806 (21 February 2011); doi: 10.1117/12.875869
Show Author Affiliations
L. Bao, nLIGHT Corp. (United States)
P. Leisher, nLIGHT Corp. (United States)
J. Wang, nLIGHT Corp. (United States)
M. Devito, nLIGHT Corp. (United States)
D. Xu, nLIGHT Corp. (United States)
M. Grimshaw, nLIGHT Corp. (United States)
W. Dong, nLIGHT Corp. (United States)
X. Guan, nLIGHT Corp. (United States)
S. Zhang, nLIGHT Corp. (United States)
C. Bai, nLIGHT Corp. (United States)
J. G. Bai, nLIGHT Corp. (United States)
D. Wise, nLIGHT Corp. (United States)
R. Martinsen, nLIGHT Corp. (United States)


Published in SPIE Proceedings Vol. 7918:
High-Power Diode Laser Technology and Applications IX
Mark S. Zediker, Editor(s)

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