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Proceedings Paper

Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates
Author(s): N. Izyumskaya; S. J. Liu; S. Okur; M. Wu; V. Avrutin; Ü. Özgür; S. Metzner; F. Bertram; J. Christen; L. Zhou; D. J. Smith; H. Morkoç
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Paper Abstract

Non-polar (1-100 ) and semipolar (1-101)GaN layers were grown on (112) and (001) Si substrates, respectively, by metalorganic chemical vapor deposition. In both cases, grooves aligned parallel to the <110> Si direction were formed by anisotropic wet etching to expose vertical {111}Si facets for growth initiation. The effect of growth conditions (substrate temperature, chamber pressure, ammonia and trimethylgallium flow rates) on the growth habits of GaN was studied. It was found that low pressure and low ammonia flow rate are beneficial for m-facet formation, while high ammonia flow rate promotes formation of (1-101) facets. Steady-state and time-resolved photoluminescence measurements revealed that the optical quality of (1-101) oriented GaN is comparable to that of c-plane GaN film grown on sapphire. The nonpolar (1-100 ) GaN shows only weak emission and fast non-radiative recombination rate. The poor optical quality of the mplane GaN can be explained by carbon incorporation during the growth under low pressure. Although further optimization of the growth conditions for better optical quality is required, preliminary results obtained for semipolar (1-101) -oriented GaN are encouraging.

Paper Details

Date Published: 18 February 2011
PDF: 9 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391W (18 February 2011); doi: 10.1117/12.875861
Show Author Affiliations
N. Izyumskaya, Virginia Commonwealth Univ. (United States)
S. J. Liu, Virginia Commonwealth Univ. (United States)
S. Okur, Virginia Commonwealth Univ. (United States)
M. Wu, Virginia Commonwealth Univ. (United States)
V. Avrutin, Virginia Commonwealth Univ. (United States)
Ü. Özgür, Virginia Commonwealth Univ. (United States)
S. Metzner, Otto-von-Guericke Univ. Magdeburg (Germany)
F. Bertram, Otto-von-Guericke Univ. Magdeburg (Germany)
J. Christen, Otto-von-Guericke Univ. Magdeburg (Germany)
L. Zhou, Arizona State Univ. (United States)
D. J. Smith, Arizona State Univ. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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