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Proceedings Paper

Growth of GaN single crystals by a Ca- and Ba-added Na flux method
Author(s): H. Ukegawa; Y. Konishi; T. Fujimori; N. Miyoshi; M. Imade; M. Yoshimura; Y. Kitaoka; T. Sasaki; Y. Mori
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Paper Abstract

GaN substrates are desirable for fabricating ultra-violet LEDs and LDs, and high-power and high-frequency transistors. High-quality GaN single crystals can be obtained by using Na flux method, but the growth habit of bulk crystals must be controlled. In this study, we investigated the effects of additives (Ca, Ba) on the growth habit and impurity concentration in the crystals. The aspect ratio (c/a) of the crystals was increased by increasing the amount of additives, showing that the growth habit could be changed from the pyramidal shape to the prism shape. Ba concentration was below the detection limit (1x1015 atoms/cm3).

Paper Details

Date Published: 3 March 2011
PDF: 8 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392A (3 March 2011); doi: 10.1117/12.875824
Show Author Affiliations
H. Ukegawa, Osaka Univ. (Japan)
Y. Konishi, Osaka Univ. (Japan)
T. Fujimori, Osaka Univ. (Japan)
N. Miyoshi, Osaka Univ. (Japan)
M. Imade, Osaka Univ. (Japan)
M. Yoshimura, Osaka Univ. (Japan)
Y. Kitaoka, Osaka Univ. (Japan)
T. Sasaki, Osaka Univ. (Japan)
Y. Mori, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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