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Proceedings Paper

Modeling and analysis of multijunction solar cells
Author(s): María González; Ngai Chan; Nicholas J. Ekins-Daukes; Jessica G. J. Adams; Paul Stavrinou; Igor Vurgaftman; Jerry R. Meyer; Joshua Abell; Robert J. Walters; Cory D. Cress; Phillip P. Jenkins
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Paper Abstract

The modeling of high efficiency, multijunction (MJ) solar cells away from the radiative limit is presented. In the model, we quantify the effect of non-radiative recombination by using radiative efficiency as a figure of merit to extract realistic values of performance under different spectral conditions. This approach represents a deviation from the traditional detailed balance approximation, where losses in the device are assumed to occur purely through radiative recombination. For lattice matched multijunction solar cells, the model predicts efficiency values of 37.1% for AM0 conditions and 52.8% under AM1.5D at 1 sun and 500X, respectively. In addition to the theoretical study, we present an experimental approach to achieving these high efficiencies by implementing a lattice matched triple junction (TJ) solar cell grown on InP substrates. The projected efficiencies of this approach are compared to results for the state of the art inverted-metamorphic (IMM) technology. We account for the effect of metamorphic junctions, essential in IMM technology, by employing reduced radiative efficiencies as derived from recent data. We show that high efficiencies, comparable to current GaAs-based MJ technology, can be accomplished without any relaxed layers for growth on InP, and derive the optimum energy gaps, material alloys, and quantum-well structures necessary to realize them.

Paper Details

Date Published: 21 February 2011
PDF: 12 pages
Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 79330R (21 February 2011); doi: 10.1117/12.875757
Show Author Affiliations
María González, Global Defense Technology & Systems, Inc. (United States)
Ngai Chan, Imperial College London (United Kingdom)
Nicholas J. Ekins-Daukes, Imperial College London (United Kingdom)
Jessica G. J. Adams, Imperial College London (United Kingdom)
Paul Stavrinou, Imperial College London (United Kingdom)
Igor Vurgaftman, U.S. Naval Research Lab. (United States)
Jerry R. Meyer, U.S. Naval Research Lab. (United States)
Joshua Abell, U.S. Naval Research Lab. (United States)
Robert J. Walters, U.S. Naval Research Lab. (United States)
Cory D. Cress, U.S. Naval Research Lab. (United States)
Phillip P. Jenkins, U.S. Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 7933:
Physics and Simulation of Optoelectronic Devices XIX
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Alexandre Freundlich, Editor(s)

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