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Proceedings Paper

Development of high-speed directly modulated DFB and DBR lasers with surface gratings
Author(s): M. Dumitrescu; J. Telkkälä; J. Karinen; J. Viheriälä; A. Laakso; S. Afzal; J.-P. Reithmaier; M. Kamp; P. Melanen; P. Uusimaa; P. Bardella; M. Vallone; I. Montrosset; O. Parillaud; M. Krakowski; D. Gready; G. Eisenstein; G. Sek
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Paper Abstract

The conventional distributed feedback and distributed Bragg reflector edge-emitting lasers employ buried gratings, which require two or more epitaxial growth steps. By using lateral corrugations of the ridge-waveguide as surface gratings the epitaxial overgrowth is avoided, reducing the fabrication complexity, increasing the yield and reducing the fabrication cost. The surface gratings are applicable to different materials, including Al-containing ones and can be easily integrated in complex device structures and photonic circuits. Single-contact and multiple contact edge-emitting lasers with laterally-corrugated ridge waveguide gratings have been developed both on GaAs and InP substrates with the aim to exploit the photon-photon resonance in order to extend their direct modulation bandwidth. The paper reports on the characteristics of such surface-grating-based lasers emitting both at 1.3 and 1.55 μm and presents the photon-photon resonance extended small-signal modulation bandwidth (> 20 GHz) achieved with a 1.6 mm long single-contact device under direct modulation. Similarly structured devices, with shorter lengths are expected to exceed 40 GHz small-signal modulation bandwidth under direct modulation.

Paper Details

Date Published: 16 February 2011
PDF: 12 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530D (16 February 2011); doi: 10.1117/12.875674
Show Author Affiliations
M. Dumitrescu, Tampere Univ. of Technology (Finland)
J. Telkkälä, Tampere Univ. of Technology (Finland)
J. Karinen, Tampere Univ. of Technology (Finland)
J. Viheriälä, Tampere Univ. of Technology (Finland)
A. Laakso, Tampere Univ. of Technology (Finland)
S. Afzal, Univ. of Kassel (Germany)
J.-P. Reithmaier, Univ. of Kassel (Germany)
M. Kamp, Julius-Maximilians-Univ. Würzburg (Germany)
P. Melanen, Modulight, Inc. (Finland)
P. Uusimaa, Modulight, Inc. (Finland)
P. Bardella, Politecnico di Torino (Italy)
M. Vallone, Politecnico di Torino (Italy)
I. Montrosset, Politecnico di Torino (Italy)
O. Parillaud, Alcatel Thales III-V Lab. (France)
M. Krakowski, Alcatel Thales III-V Lab. (France)
D. Gready, Technion (Israel)
G. Eisenstein, Technion (Israel)
G. Sek, Wroclaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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