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Proceedings Paper

Mid-IR lasing of Cr:ZnSe/As2S3:As2Se3 composite materials
Author(s): D. V. Martyshkin; V. V. Fedorov; J. T. Goldstein; S. B. Mirov
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Paper Abstract

Compact solid-state laser systems based on chromium doped II-VI semiconductor materials (ZnS, ZnSe, CdSe) with tunability over 2-3.6 μm, output power exceeding 10W, and efficiency up to 70% were demonstrated recently. A further increase of the output power requires a thorough thermal management of the active element. Fiber geometry of gain element is very promising among other different approaches to control beam quality and thermal lensing. The proposed transition metal doped ZnS:ZnSe/As2S3:As2Se3 composite materials with index matching of II-VI and V-VI components represent a new way for design of mid-infrared laser active fibers. Chalcogenide glasses have wide transparency range in mid-IR, enable fiber geometry, and their refractive index can be varied from n=2.1 to n=2.5 matching refractive index of ZnS (n=2.26) and ZnSe (n=2.44) crystals and eliminating scattering losses. The II-VI compounds provide a tetrahedral coordination of the chromium ions required for mid-IR lasing. We report the first mid-IR laser active Cr:ZnSe/As2S3:As2Se3 composites fabrication and room-temperature lasing at 2.4 μm. The Cr:ZnSe/As2S3:As2Se3 composites were prepared by annealing of the appropriate compounds under vacuum and by casting and drying of Cr:ZnSe microparticles suspension in As2S3:As2Se3 propylamine solution. All samples demonstrated mid-IR photoluminescence typical for Cr2+ ions in ZnSe host. High optical gain and low passive losses in Cr:ZnSe/As2S3:As2Se3 composite material were demonstrated in random lasing experiments.

Paper Details

Date Published: 15 February 2011
PDF: 8 pages
Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79121I (15 February 2011); doi: 10.1117/12.875591
Show Author Affiliations
D. V. Martyshkin, The Univ. of Alabama at Birmingham (United States)
IPG Photonics Corp. (United States)
V. V. Fedorov, The Univ. of Alabama at Birmingham (United States)
IPG Photonics Corp. (United States)
J. T. Goldstein, Air Force Research Lab. (United States)
S. B. Mirov, The Univ. of Alabama at Birmingham (United States)
IPG Photonics - Mid-Infrared Lasers (United States)


Published in SPIE Proceedings Vol. 7912:
Solid State Lasers XX: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh Shori, Editor(s)

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