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Proceedings Paper

Effects of γ-irradiation on optical, electrical, and laser characteristics of pure and transition metal doped II-VI semiconductors
Author(s): Tetyana Konak; Michael Tekavec; Vladimir V. Fedorov; Sergey B. Mirov
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Paper Abstract

We report a comprehensive study of gamma-irradiation on optical, electrical, and laser characteristics of pure and transition-metal doped single and polycrystalline ZnS and ZnSe. Polished pure, Cr-doped, and Ag, Au, Cu, Al, In, and Mn co-doped ZnS and ZnSe crystals after absorption and electro-conductivity characterization were gamma-irradiated at doses of 1.37x108, and 1.28x108 rad at +10 and -3°C, respectively. Dynamic RT absorption studies, electro-conductivity measurements and mid-IR lasing were performed for different exposition times of crystals at RT. Cr:ZnSe and Cr:ZnS lasers based on identical gamma-irradiated and non-irradiated crystals featured a very similar pump thresholds, slope efficiencies, and output powers.

Paper Details

Date Published: 4 March 2011
PDF: 7 pages
Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 791229 (4 March 2011); doi: 10.1117/12.875539
Show Author Affiliations
Tetyana Konak, The Univ. of Alabama at Birmingham (United States)
Michael Tekavec, The Univ. of Alabama at Birmingham (United States)
Vladimir V. Fedorov, The Univ. of Alabama at Birmingham (United States)
Sergey B. Mirov, The Univ. of Alabama at Birmingham (United States)


Published in SPIE Proceedings Vol. 7912:
Solid State Lasers XX: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh Shori, Editor(s)

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