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Proceedings Paper

Properties of TCO anodes deposited by APCVD and their applications to OLEDs
Author(s): R. Y. Korotkov; P. Ricou; L. Fang; J. Coffey; G. Silverman; M. Ruske; H. Schwab; A. B. Padmaperuma; D. J. Gaspar
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Paper Abstract

Doped ZnO is one of the materials currently being considered in industrial applications as a possible replacement for ITO as a transparent conducting oxide. The properties of doped ZnO anodes prepared at Arkema Inc. are analyzed in 3D using high-throughput mapping tools. The 2D resistivities of the coatings measured by 4-point probe compare well with the resistivity values calculated from the spectroscopic ellipsometer measurements. It was found that the dependence of effective mass of doped ZnO on Hall-electron concentration influences optically-calculated mobilities and electron concentrations. To study the variation of the film properties along z-axis, the films are polished using mechanical planarization technique. The electrical and crystallographic depth profiles for these films are studied by differential Hall-effect and grazing-angle x-ray spectroscopy. The electron mobility increases continuously from the glass-film interface (12 cm2/Vs) to the ZnO film surface (19 cm2/Vs). The electron concentration depth profile has bell-like dependence with a maximum at 1.55 x 1021 cm-3. In addition to the increasing grain size, the texture coefficients for the (002) reflection decrease and (103) reflection increase towards the air-film interface. Examples of the applications of the doped ZnO anodes in the OLED structures suggest improvement of external quantum efficiency with introduction of an Al2O3 undercoat.

Paper Details

Date Published: 3 March 2011
PDF: 12 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793919 (3 March 2011); doi: 10.1117/12.875319
Show Author Affiliations
R. Y. Korotkov, Arkema Inc. (United States)
P. Ricou, Arkema Inc. (United States)
L. Fang, Arkema Inc. (United States)
J. Coffey, Arkema Inc. (United States)
G. Silverman, Arkema Inc. (United States)
M. Ruske, Philips Technologie GmbH (Germany)
H. Schwab, Philips Technologie GmbH (Germany)
A. B. Padmaperuma, Pacific Northwest National Lab. (United States)
D. J. Gaspar, Pacific Northwest National Lab. (United States)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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