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Proceedings Paper

11 W single gain element dilute nitride disk laser emitting at 1180 nm
Author(s): T. Leinonen; V.-M. Korpijärvi; Janne Puustinen; Ryan J. Epstein; M. Guina
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Paper Abstract

We report a study investigating the power scaling properties of a single gain chip GaInNAs/GaAs semiconductor disk laser emitting around 1180 nm. The power scaling was done by varying the pump spot diameter between 320 μm and 460 μm. The emission efficiency was assessed for output coupling ratios between 0.1% and 3%. A maximum output power of 11 W was achieved with a 1.5 % output coupling ratio and a pump spot diameter of 390 μm. The heat from the active region was extracted by an intracavity diamond heat spreader attached to a water-cooled copper mount.

Paper Details

Date Published: 21 February 2011
PDF: 7 pages
Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 791905 (21 February 2011); doi: 10.1117/12.875318
Show Author Affiliations
T. Leinonen, Tampere Univ. of Technology (Finland)
V.-M. Korpijärvi, Tampere Univ. of Technology (Finland)
Janne Puustinen, Tampere Univ. of Technology (Finland)
Ryan J. Epstein, Areté Associates (United States)
M. Guina, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 7919:
Vertical External Cavity Surface Emitting Lasers (VECSELs)
Ursula Keller, Editor(s)

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