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Proceedings Paper

Narrow-linewidth distributed feedback lasers with laterally coupled ridge-waveguide surface gratings fabricated using nanoimprint lithography
Author(s): M. Dumitrescu; J. Telkkälä; J. Karinen; J. Viheriälä; A. Laakso; K. Haring; M.-R. Viljanen; J. Paajaste; R. Koskinen; S. Suomalainen; J. Lyytikäinen; T. Leinonen; M. Pessa
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Paper Abstract

The conventional distributed feedback (DFB) edge-emitting lasers with buried gratings require two or more epitaxial growth steps. To avoid the problematic overgrowth we have used laterally-corrugated ridge-waveguide surface gratings, which also enable easy integration of the resulting laterally-coupled DFB (LC-DFB) lasers with other devices and are applicable to different materials, including Al-containing ones. The paper presents the modeling and design particularities of LC-DFB lasers, the fabrication process, involving a highly productive and cost-effective UVnanoimprint lithography technique, and the characteristics obtained for the LC-DFB lasers fabricated from GaAs-, GaSband InP-based epiwafers. The first batches of GaAs-based LC-DFB lasers, emitting at 894 nm, GaSb-based LC-DFB lasers emitting at 1.946 μm and InP-based LC-DFB lasers, emitting at 1.55 μm had relatively low threshold currents, a high side-mode-suppression-ratio and exhibited linewidths in the range of 1 MHz and below, showing that the LC-DFB lasers are an effective low-cost alternative for the conventional buried-grating DFB lasers.

Paper Details

Date Published: 16 February 2011
PDF: 13 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530B (16 February 2011); doi: 10.1117/12.875317
Show Author Affiliations
M. Dumitrescu, Tampere Univ. of Technology (Finland)
J. Telkkälä, Tampere Univ. of Technology (Finland)
J. Karinen, Tampere Univ. of Technology (Finland)
J. Viheriälä, Tampere Univ. of Technology (Finland)
A. Laakso, Tampere Univ. of Technology (Finland)
K. Haring, Tampere Univ. of Technology (Finland)
M.-R. Viljanen, Tampere Univ. of Technology (Finland)
J. Paajaste, Tampere Univ. of Technology (Finland)
R. Koskinen, Tampere Univ. of Technology (Finland)
S. Suomalainen, Tampere Univ. of Technology (Finland)
J. Lyytikäinen, Tampere Univ. of Technology (Finland)
T. Leinonen, Tampere Univ. of Technology (Finland)
M. Pessa, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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