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Proceedings Paper

Non-polar GaInN-based light-emitting diodes: an approach for wavelength-stable and polarized-light emitters
Author(s): Theeradetch Detchprohm; Mingwei Zhu; Shi You; Liang Zhao; Wenting Hou; Christoph Stark; Christian Wetzel
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Paper Abstract

In absence of piezoelectric polarization along the growth axis, a- and m-plane green GaInN light emitting diodes manifest stable emission wavelength -- independent of the injection current density. The shift of the dominant wavelength is less than 8 nm when varying the forward current density from 0.1 to 38 A/cm2. Furthermore, the light emitted from the growth surface of such non-polar structures shows a very degree of linear polarization. This is attributed to a strong valance band splitting in such anisotropically strained wurtzite GaInN quantum wells . Such light emitting diodes show a high potential for energy efficient display applications.

Paper Details

Date Published: 9 February 2011
PDF: 12 pages
Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 79540N (9 February 2011); doi: 10.1117/12.875208
Show Author Affiliations
Theeradetch Detchprohm, Rensselaer Polytechnic Institute (United States)
Mingwei Zhu, Rensselaer Polytechnic Institute (United States)
Shi You, Rensselaer Polytechnic Institute (United States)
Liang Zhao, Rensselaer Polytechnic Institute (United States)
Wenting Hou, Rensselaer Polytechnic Institute (United States)
Christoph Stark, Rensselaer Polytechnic Institute (United States)
Christian Wetzel, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 7954:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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