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Proceedings Paper

Nanopatterned quantum dot active region lasers on InP substrates
Author(s): L. J. Mawst; J. H. Park; Y. Huang; J. Kirch; Y. Sin; B. Foran; C.-C. Liu; P. F. Nealey; T. F. Kuech
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Paper Abstract

We employ an alternate approach to Stranski-Krastanow (SK) QD formation involving the use of nanopatterning with diblock copolymers combined with selective MOCVD growth, enabling QD formation over large surface areas intended for device application. This approach allows for increased control over the QD size and distribution and elimination of the problematic wetting layer associated with SK QDs. Cross-sectional TEM studies of the nanopatterned QD active regions confirm the absence of a wetting layer, and AFM/SEM measurements indicate high QD densities are achieved (>6x1010 cm-2). Furthermore, the process is applicable to large surface coverage, showing promise for implementation into long wavelength (λ = 1.3-1.5μm) sources employing either lattice-matched or strained QDs. Preliminary device results demonstrate LT (up to 170K) InP-based laser operation from devices employing patterned lattice-matched InxGa1- xAs QD (~ 20 nm dia.) active regions. The formation of high density compressively strained InAs QDs on InP substrates is also demonstrated using the nanopatterning and selective growth process.

Paper Details

Date Published: 17 February 2011
PDF: 7 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 795304 (17 February 2011); doi: 10.1117/12.875199
Show Author Affiliations
L. J. Mawst, Univ. of Wisconsin-Madison (United States)
J. H. Park, Univ. of Wisconsin-Madison (United States)
Y. Huang, Univ. of Wisconsin-Madison (United States)
J. Kirch, Univ. of Wisconsin-Madison (United States)
Y. Sin, The Aerospace Corp. (United States)
B. Foran, The Aerospace Corp. (United States)
C.-C. Liu, Univ. of Wisconsin-Madison (United States)
P. F. Nealey, Univ. of Wisconsin-Madison (United States)
T. F. Kuech, Univ. of Wisconsin-Madison (United States)


Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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