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Proceedings Paper

Comparison of gain measurement techniques for 1.3μm quantum dot lasers
Author(s): H. Shahid; D. T. D. Childs; B. J. Stevens; R. A. Hogg
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Paper Abstract

This paper reports on the direct comparison of Hakki-Paoli and segmented contact method gain spectra measurement techniques for InAs/GaAs 1.3μm quantum dot laser material. This was made possible by realizing a single-mode segmented contact device structure. The differences in required apparatus, ease of measurements, signal to noise ratio, and relative advantages and disadvantages of these two complementary techniques are discussed under continuous wave operation. As expected, at current densities (prior to possible self heating effects) the techniques are shown to give essentially identical results. However, the segmented contact method is demonstrated to be more accurate for internal loss measurements. A method to remove self heating effects in the Hakki-Paoli measurements is described and allows the gain and spontaneous emission measurements to be performed at carrier densities as high as 5.5kA/cm2 with a constant cavity temperature.

Paper Details

Date Published: 17 February 2011
PDF: 9 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79531W (17 February 2011); doi: 10.1117/12.875148
Show Author Affiliations
H. Shahid, The Univ. of Sheffield (United Kingdom)
D. T. D. Childs, The Univ. of Sheffield (United Kingdom)
B. J. Stevens, The Univ. of Sheffield (United Kingdom)
R. A. Hogg, The Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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