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Proceedings Paper

The progress of QD laser in the near IR wavelength region
Author(s): D. K. Oh; J. S. Kim; J. H. Lee; S. U. Hong; C. W. Lee; W. S. Han; B. S. Choi
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Paper Abstract

Demand on high quality and new contents in optical internet still requires continuous development of advanced optical components in the point of low cost and high performance. The use of quantum dot structure in the active region of semiconductor optical devices have been shown superior high carrier dynamic and temperature less sensitive properties by some research groups. A 1.5μm QD laser on the InP(100) substrate will be demonstrated in detail with the brief review of new achievements of QD optical devices in the near IR wavelength range. Enhanced temperature stability of Fabry-Perot QD laser will be reported. Also, 10Gbps direct modulation speed demonstrated with the moderate side mode suppression in the DFB QD laser. Statistic approach for the reproducible formation of quantum dot in the MOCVD and MBE system also will be introduced

Paper Details

Date Published: 24 January 2011
PDF: 7 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79450D (24 January 2011); doi: 10.1117/12.875141
Show Author Affiliations
D. K. Oh, Electronics and Telecommunications Research Institute (Korea, Republic of)
J. S. Kim, Chonbuk National Univ. (Korea, Republic of)
J. H. Lee, Korea Photonics Technology Institute (Korea, Republic of)
S. U. Hong, Electronics and Telecommunications Research Institute (Korea, Republic of)
C. W. Lee, Electronics and Telecommunications Research Institute (Korea, Republic of)
W. S. Han, Electronics and Telecommunications Research Institute (Korea, Republic of)
B. S. Choi, Electronics and Telecommunications Research Institute (Korea, Republic of)


Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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