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Proceedings Paper

Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions
Author(s): Jing Zhang; Hua Tong; Guangyu Liu; Juan A. Herbsommer; G. S. Huang; Nelson Tansu
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Paper Abstract

Thermoelectric properties of AlInN alloys, grown by metalorganic vapor phase epitaxy (MOVPE), with In-contents (x) from 11 % up to 21.34% were characterized and analyzed at room temperature. The thermoelectric figure of merit (Z*T) values of the n-Al1-xInxN alloys were measured as high as 0.391 up to 0.532 at T = 300 K. The use of high In-content (x = 21.34%) AlInN alloys leads to significant reduction in thermal conductivity [κ = 1.62 W/(mK)] due to the increased alloy scattering, however, the optimized thermoelectric material was obtained for AlInN alloy with In-content of 17% attributed to its large power factor.

Paper Details

Date Published: 4 March 2011
PDF: 9 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79390O (4 March 2011); doi: 10.1117/12.875125
Show Author Affiliations
Jing Zhang, Lehigh Univ. (United States)
Hua Tong, Lehigh Univ. (United States)
Guangyu Liu, Lehigh Univ. (United States)
Juan A. Herbsommer, Lehigh Univ. (United States)
G. S. Huang, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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