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Proceedings Paper

Gain characteristics of deep UV AlGaN quantum wells lasers
Author(s): Jing Zhang; Hongping Zhao; Nelson Tansu
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Paper Abstract

The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands crossover on the gain characteristics of AlGaN QW with AlN barriers is analyzed. Attributing to the strong transition between conduction - CH bands, the TM spontaneous emission recombination rate is enhanced significantly for high Al-content AlGaN QWs. Large TM-polarized material gain is shown as achievable for high Al-content AlGaN QWs, which indicates the feasibility of TM lasing for lasers emitting at ~220-230 nm.

Paper Details

Date Published: 17 February 2011
PDF: 9 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530H (17 February 2011); doi: 10.1117/12.875079
Show Author Affiliations
Jing Zhang, Lehigh Univ. (United States)
Hongping Zhao, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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