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Proceedings Paper

Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes
Author(s): Hongping Zhao; Jing Zhang; Guangyu Liu; Takahiro Toma; Jonathan D. Poplawsky; Volkmar Dierolf; Nelson Tansu
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Paper Abstract

Metalorganic chemical vapor deposition (MOCVD) growths of linearly-shaped staggered InGaN quantum wells lightemitting diodes are performed. The use of linearly-shaped staggered InGaN QWs leads to the shift of both electron and hole wavefunction toward the center of the quantum well region with enhanced momentum matrix element, which results in the enhancement of the spontaneous radiaitve recombination rate. The power-density-dependent cathodoluminescence measurements for both conventional and linearly-shaped staggered InGaN QW show 2.5-3.5 times increase in the integrated cathodoluminescence intensity by using the novel active region.

Paper Details

Date Published: 2 March 2011
PDF: 6 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793905 (2 March 2011); doi: 10.1117/12.875002
Show Author Affiliations
Hongping Zhao, Lehigh Univ. (United States)
Jing Zhang, Lehigh Univ. (United States)
Guangyu Liu, Lehigh Univ. (United States)
Takahiro Toma, Lehigh Univ. (United States)
Jonathan D. Poplawsky, Lehigh Univ. (United States)
Volkmar Dierolf, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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