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Proceedings Paper

Numerical study on efficiency droop of blue InGaN light-emitting diodes
Author(s): Yen-Kuang Kuo; Jih-Yuan Chang; Jen-De Chen
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Paper Abstract

Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.

Paper Details

Date Published: 21 February 2011
PDF: 14 pages
Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 793317 (21 February 2011); doi: 10.1117/12.874849
Show Author Affiliations
Yen-Kuang Kuo, National Changhua Univ. of Education (Taiwan)
Jih-Yuan Chang, National Changhua Univ. of Education (Taiwan)
Jen-De Chen, National Changhua Univ. of Education (Taiwan)

Published in SPIE Proceedings Vol. 7933:
Physics and Simulation of Optoelectronic Devices XIX
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Alexandre Freundlich, Editor(s)

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