Share Email Print
cover

Proceedings Paper

Phase change characteristics of Ge2Sb2Te5 thin film for a self-holding optical gate switch
Author(s): Tatsuya Toyosaki; Daiki Tanaka; Yuya Shoji; Masashi Kuwahara; Xiaomin Wang; Kenji Kintaka; Hitoshi Kawashima; Yuichiro Ikuma; Hiroyuki Tsuda
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Fast and low power consumption optical switches are required for photonic networks. To this end, we proposed the optical gate switch using phase change material (PCM) and silicon waveguides. This switch had low power consumption because it consumed power only when the state was changed. Furthermore, the chip size is very small due to the large refractive index change of PCM. In this paper, we studied the phase-change characteristics of various kinds of thin GST film on SOI (silicon-oninsulator). A laser diode (LD) with a wavelength of 660 nm was used to irradiate the material. We compared the optical responses by laser pulse irradiation on GST films, and concluded GST-147 was the most suitable material for the optical switch because it had the lowest phase change threshold. The phase-change characteristics of GST-225 films with thickness of 25 nm, 50 nm and 75 nm were also examined. Thicker GST films had lower phase change thresholds. However, thermal simulations showed that the phase of the bottom part of thicker films may not be changed. Therefore, we concluded that GST films with thicknesses between 25 nm to 50 nm are the most suitable for optical switches.

Paper Details

Date Published: 17 January 2011
PDF: 8 pages
Proc. SPIE 7943, Silicon Photonics VI, 794306 (17 January 2011); doi: 10.1117/12.874712
Show Author Affiliations
Tatsuya Toyosaki, Keio Univ. (Japan)
Daiki Tanaka, Keio Univ. (Japan)
Yuya Shoji, National Institute of Advanced Industrial Science and Technology (Japan)
Masashi Kuwahara, National Institute of Advanced Industrial Science and Technology (Japan)
Xiaomin Wang, National Institute of Advanced Industrial Science and Technology (Japan)
Kenji Kintaka, National Institute of Advanced Industrial Science and Technology (Japan)
Hitoshi Kawashima, National Institute of Advanced Industrial Science and Technology (Japan)
Yuichiro Ikuma, Keio Univ. (Japan)
Hiroyuki Tsuda, Keio Univ. (Japan)


Published in SPIE Proceedings Vol. 7943:
Silicon Photonics VI
Joel A. Kubby; Graham T. Reed, Editor(s)

© SPIE. Terms of Use
Back to Top