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Proceedings Paper

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
Author(s): Bo Monemar; Plamen Paskov; Galia Pozina; Carl Hemmingsson; Peder Bergman; David Lindgren; Lars Samuelson; Xianfeng Ni; Hadis Morkoç; Tanya Paskova; Zhaoxia Bi; Jonas Ohlsson
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Paper Abstract

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the low temperature BE spectra on excitation intensity as well as the transient decay behavior demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also demonstrated and briefly discussed.

Paper Details

Date Published: 2 March 2011
PDF: 8 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793907 (2 March 2011); doi: 10.1117/12.874687
Show Author Affiliations
Bo Monemar, Linköping Univ. (Sweden)
Lund Univ. (Sweden)
Plamen Paskov, Linköping Univ. (Sweden)
Galia Pozina, Linköping Univ. (Sweden)
Carl Hemmingsson, Linköping Univ. (Sweden)
Peder Bergman, Linköping Univ. (Sweden)
David Lindgren, Lund Univ. (Sweden)
Lars Samuelson, Lund Univ. (Sweden)
Xianfeng Ni, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)
Tanya Paskova, Kyma Technologies, Inc. (United States)
Zhaoxia Bi, Glo AB (Sweden)
Jonas Ohlsson, Glo AB (Sweden)

Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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