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Proceedings Paper

Fabrication of electrostatic-actuated single-crystalline 4H-SiC bridge structures by photoelectrochemical etching
Author(s): Naoki Watanabe; Tsunenobu Kimoto; Jun Suda
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Paper Abstract

An electrostatic-actuated suspended bridge structure composed by single-crystalline silicon carbide (SiC) is fabricated. The structure is entirely made of homoepitaxially grown single-crystalline 4H-SiC. Electrical isolation between the suspended bridge and the base plate is established with a pnp junction formed by multiple ion implantation. The structure is fabricated by a combination of reactive ion etching (RIE) and doping-selective photoelectrochemical (PEC) etching. The suspended bridge is actuated by applying a voltage between the bridge and the base plate.

Paper Details

Date Published: 15 February 2011
PDF: 6 pages
Proc. SPIE 7926, Micromachining and Microfabrication Process Technology XVI, 79260B (15 February 2011); doi: 10.1117/12.874543
Show Author Affiliations
Naoki Watanabe, Kyoto Univ. (Japan)
Tsunenobu Kimoto, Kyoto Univ. (Japan)
Jun Suda, Kyoto Univ. (Japan)


Published in SPIE Proceedings Vol. 7926:
Micromachining and Microfabrication Process Technology XVI
Mary Ann Maher; Jung-Chih Chiao; Paul J. Resnick, Editor(s)

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