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Proceedings Paper

Thermo-optic coefficients of SiC, GaN, and AlN up to 512°C from infrared to ultraviolet region for tunable filter applications
Author(s): Naoki Watanabe; Tsunenobu Kimoto; Jun Suda
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Paper Abstract

The temperature dependence of the refractive indices of 4H-SiC, GaN, and AlN were investigated in a wavelength range from the near band edge (392 nm for SiC, 367 nm for GaN, and 217 nm for AlN) to infrared (1700 nm) and a temperature range from room temperature to 512°C. Optical interference measurements with vertical incident configuration were employed to precisely evaluate ordinary refractive indices. In visible region, the thermo-optic coefficient of GaN has the largest value in these materials. Optical simulation of GaN-based tunable band-pass filter with AlGaN/GaN distributed Bragg reflectors (DBRs) was also carried out by using the obtained thermo-optic coefficients. It revealed that 9 nm red-shift can be obtained from room temperature to 500°C.

Paper Details

Date Published: 11 February 2011
PDF: 6 pages
Proc. SPIE 7926, Micromachining and Microfabrication Process Technology XVI, 792604 (11 February 2011); doi: 10.1117/12.874531
Show Author Affiliations
Naoki Watanabe, Kyoto Univ. (Japan)
Tsunenobu Kimoto, Kyoto Univ. (Japan)
Jun Suda, Kyoto Univ. (Japan)

Published in SPIE Proceedings Vol. 7926:
Micromachining and Microfabrication Process Technology XVI
Mary Ann Maher; Jung-Chih Chiao; Paul J. Resnick, Editor(s)

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