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Proceedings Paper

High-power 1.25 µm InAs QD VECSEL based on resonant periodic gain structure
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Paper Abstract

We compare an InAs quantum dot (QD) vertical external-cavity surface-emitting laser (VECSEL) design consisting of 4 groups of 3 closely spaced QD layers with a resonant periodic gain (RPG) structure, where each of the 12 QD layers is placed at a separate field antinode. This increased the spacing between the QDs, reducing strain and greatly improving device performance. For thermal management, the GaAs substrate was thinned and indium bonded to CVD diamond. A fiber-coupled 808 nm diode laser was used as pump source, a 1% transmission output coupler completed the cavity. CW output powers over 4.5 W at 1250 nm were achieved.

Paper Details

Date Published: 22 February 2011
PDF: 6 pages
Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 791904 (22 February 2011); doi: 10.1117/12.874321
Show Author Affiliations
Alexander R. Albrecht, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
Thomas J. Rotter, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
Christopher P. Hains, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
Andreas Stintz, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
Guofeng Xin, Shanghai Institute of Optics and Fine Mechanics (China)
Tsuei-Lian Wang, College of Optical Sciences, The Univ. of Arizona (United States)
Yushi Kaneda, College of Optical Sciences, The Univ. of Arizona (United States)
Jerome V. Moloney, College of Optical Sciences, The Univ. of Arizona (United States)
Kevin J. Malloy, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
Ganesh Balakrishnan, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7919:
Vertical External Cavity Surface Emitting Lasers (VECSELs)
Ursula Keller, Editor(s)

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