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Proceedings Paper

Gain and absorption characteristics of bilayer quantum dot lasers beyond 1.3 μm
Author(s): Mohammed A. Majid; Siming C. Chen; David T. D. Childs; H. Shahid; Robert J. Airey; Kenneth Kennedy; Richard A. Hogg; Edmund Clarke; Peter Spencer; Ray Murray
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Paper Abstract

In this paper we report on the multi-section gain and absorption analysis of strain engineered molecular beam epitaxy (MBE) grown GaAs and InGaAs capped bilayers. The InGaAs capped bilayer quantum dot (QD) lasers extends the room temperature lasing wavelength to 1.45 μm. The spectral measurement of gain demonstrates that net modal gain is achieved beyond 1.5 μm at room temperature. Analysis of the temperature and current density dependence gain characteristics of a GaAs capped bilayer sample indicate that the temperature sensitivity of threshold current around room temperature is due to phonon assisted thermal escape of carriers from the QDs.

Paper Details

Date Published: 4 February 2011
PDF: 7 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 795303 (4 February 2011); doi: 10.1117/12.874214
Show Author Affiliations
Mohammed A. Majid, The Univ. of Sheffield (United Kingdom)
Siming C. Chen, The Univ. of Sheffield (United Kingdom)
David T. D. Childs, The Univ. of Sheffield (United Kingdom)
H. Shahid, The Univ. of Sheffield (United Kingdom)
Robert J. Airey, The Univ. of Sheffield (United Kingdom)
Kenneth Kennedy, The Univ. of Sheffield (United Kingdom)
Richard A. Hogg, The Univ. of Sheffield (United Kingdom)
Edmund Clarke, Imperial College London (United Kingdom)
Peter Spencer, Imperial College London (United Kingdom)
Ray Murray, Imperial College London (United Kingdom)


Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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