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Proceedings Paper

Roll-to-roll fabrication and metastability in metal oxide transistors
Author(s): Warren B. Jackson; Han-Jun Kim; Ohseung Kwon; Bao Yeh; Randy Hoffman; Devin Mourey; Tim Koch; Carl Taussig; Richard Elder; Albert Jeans
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Paper Abstract

A roll-to-roll process is used to fabricate amorphous silicon and amorphous multicomponent oxide (MCO) transistors on flexible substrates using self aligned imprint lithography (SAIL). SAIL solves the layer to layer alignment problem. The imprint lithography patterned MCO transistors had a mobility of 15 cm2V-1 sec-1 and an on-off ratio of 107. Full display arrays with data, gate, hold capacitors and cross-overs were patterned using SAIL technology. Studies of stability of the MCO transistors indicate the importance of controlling O vacancies in the material particularly the back channel. Devices subjected to -10V gate bias stress at 60C under illumination exhibited behavior consistent with state creation in the upper and lower half of the gap near the back channel interface possibly associated with O vacancy formation.

Paper Details

Date Published: 3 February 2011
PDF: 11 pages
Proc. SPIE 7956, Advances in Display Technologies; and E-papers and Flexible Displays, 795604 (3 February 2011); doi: 10.1117/12.874180
Show Author Affiliations
Warren B. Jackson, Hewlett-Packard Co. (United States)
Han-Jun Kim, Phicot, Inc. (United States)
Ohseung Kwon, Phicot, Inc. (United States)
Bao Yeh, Hewlett-Packard Co. (United States)
Randy Hoffman, Hewlett-Packard Co. (United States)
Devin Mourey, Hewlett-Packard Co. (United States)
Tim Koch, Hewlett-Packard Co. (United States)
Carl Taussig, Hewlett-Packard Co. (United States)
Richard Elder, Hewlett-Packard Co. (United States)
Albert Jeans, Hewlett-Packard Co. (United States)

Published in SPIE Proceedings Vol. 7956:
Advances in Display Technologies; and E-papers and Flexible Displays
Karlheinz Blankenbach; Liang-Chy Chien; Sin-Doo Lee; Ming Hsien Wu, Editor(s)

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