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Proceedings Paper

Development of patterned sapphire substrate and the application to the growth of non-polar and semi-polar GaN for light-emitting diodes
Author(s): Kazuyuki Tadatomo; Narihito Okada
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Paper Abstract

The light-emitting diodes (LEDs) with high external quantum efficiency (EQE) are usually fabricated on the patterned sapphire substrate (PSS). The PSS reduces the dislocation density in the GaN layer and enhances the light extraction efficiency (LEE) from the LED chip by scattering the light confined in GaN layer attributed to the critical angle between GaN (n=2.4) and sapphire substrate (n=1.7) (or air (n=1.0)). On the other hand, non-polar GaN and semipolar GaN are attracted much attention to eliminate the quantum confined Stark effect (QCSE). Recently, we have developed novel technology to grow non-polar or semi-polar GaN on the PSS with high quality and large diameter by metal-organic vapor phase epitaxy (MOVPE). For example, m-plane GaN grown on a-plane PSS and {112 (see manuscript)} plane GaN grown on r-plane PSS. The growth of c-plane GaN from the c-plane-like sidewall of the r-plane PSS results in {112 (see manuscript)} GaN on the r-plane PSS. The full widths at half maximum of X-ray rocking curves (FWHM-XRC) of the {112(see manuscript)} GaN along the azimuths parallel and perpendicular to the c-direction were 533 and 260 arcsec, respectively. Dislocation density of the GaN was approximately 2×108 cm-2. These non-polar and semi-polar GaN are expected to be suitable for novel GaN substrate or GaN template for LEDs.

Paper Details

Date Published: 9 February 2011
PDF: 10 pages
Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 795416 (9 February 2011); doi: 10.1117/12.874179
Show Author Affiliations
Kazuyuki Tadatomo, Yamaguchi Univ. (Japan)
Narihito Okada, Yamaguchi Univ. (Japan)


Published in SPIE Proceedings Vol. 7954:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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