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Proceedings Paper

PECVD grown SiO2 film process optimization
Author(s): Song Ping; Lian Jie; Shang Gao; Ping Li; Xiao Wang; Shiliang Wu; Zheng Ma
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Paper Abstract

SiO2 films have been widely applied in the production of electronic devices, integrated devices, optical thin film devices, sensors because of their desirable properties, such as good insulation, high light transmittance, strong corrosion resistance, good dielectric properties, etc. Amorphous silicon dioxide was fabricated by plasma enhanced chemical deposition on GaAs substrate. The thickness and refractive index are obtained by optical transmittance of the film, which are measured by ellipsometer. The deposition rate of the film and the refractive index are studied at different time, pressure, and the ratio of SiH4/N2O. The SiO2 thin film growth rate remained basically unchanged versus time. The reaction chamber pressure, which make the SiO2 thin film growth rate getting the peak, should be about 105Pa. But the SiO2 thin film growth rate and the refractive index are anti-related. The enormous changes of the gas flow rate do not have huge impact to the response rate. However, the refractive index of SiO2 thin film changed greatly when the SiH4flow increased the refractive index of the thin films is highest when the ratio of SiH4/N2O is 200:20

Paper Details

Date Published: 17 January 2011
PDF: 6 pages
Proc. SPIE 7943, Silicon Photonics VI, 79431E (17 January 2011); doi: 10.1117/12.874161
Show Author Affiliations
Song Ping, Shandong Univ. (China)
Lian Jie, Shandong Univ. (China)
Shang Gao, Shandong Univ. (China)
Ping Li, Shandong Univ. (China)
Xiao Wang, Shandong Univ. (China)
Shiliang Wu, Shandong Univ. (China)
Zheng Ma, Shandong Univ. (China)


Published in SPIE Proceedings Vol. 7943:
Silicon Photonics VI
Joel A. Kubby; Graham T. Reed, Editor(s)

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