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Proceedings Paper

Bridging wide bandgap nanowires for ultraviolet light detection
Author(s): Yanbo Li; Miao Zhong; Takero Tokizono; Alexander Paulsen; Meiyong Liao; Yasuo Koide; Ichiro Yamada; Jean-Jacques Delaunay
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Paper Abstract

A single-step bridging method is used to fabricate bridged wide bandgap semiconductor nanowire structures as ultraviolet photodetectors. The nanowires are bridged across self-grown electrodes in a chemical vapor deposition process without resorting to epitaxial growth and photolithography techniques. Depending on the surface depletion properties of the nanowires, two types of bridged nanowire structures are designed. For ZnO nanowires with strong surface depletion effect, a bascule nanobridge structure is adopted. For β-Ga2O3 nanowires with weak surface depletion effect, a direct nanobridge structure is used. The bridged nanowire photodetectors are operated with a few volts and show good spectral selectivity, and high and fast photoresponse.

Paper Details

Date Published: 10 March 2011
PDF: 6 pages
Proc. SPIE 7940, Oxide-based Materials and Devices II, 79400E (10 March 2011); doi: 10.1117/12.874142
Show Author Affiliations
Yanbo Li, The Univ. of Tokyo (Japan)
Miao Zhong, The Univ. of Tokyo (Japan)
Takero Tokizono, The Univ. of Tokyo (Japan)
Alexander Paulsen, The Univ. of Tokyo (Japan)
Meiyong Liao, National Institute for Materials Science (Japan)
Yasuo Koide, National Institute for Materials Science (Japan)
Ichiro Yamada, The Univ. of Tokyo (Japan)
Jean-Jacques Delaunay, The Univ. of Tokyo (Japan)

Published in SPIE Proceedings Vol. 7940:
Oxide-based Materials and Devices II
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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