Share Email Print
cover

Proceedings Paper

Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model
Author(s): Yuseong Jang; Dong-Hyun Jang; Jong-In Shim; Dong-Soo Shin
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We present our approach to measure the profile of nonuniformly bent GaN epi-wafers grown on sapphire substrates. By using a laser displacement sensor, the position of the epi-wafer is accurately measured and mapped. From the measured profile data, analysis of stress distributions over the nonuniformly bent wafer is performed by using a theoretical model. We show the result of theoretical analysis of how the stress tensors distribute over a wafer. The estimated stress tensors are related with optical properties such as photoluminescence of the wafer.

Paper Details

Date Published: 4 March 2011
PDF: 9 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392B (4 March 2011); doi: 10.1117/12.874127
Show Author Affiliations
Yuseong Jang, Hanyang Univ. (Korea, Republic of)
Dong-Hyun Jang, Hanyang Univ. (Korea, Republic of)
Jong-In Shim, Hanyang Univ. (Korea, Republic of)
Dong-Soo Shin, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

© SPIE. Terms of Use
Back to Top