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Proceedings Paper

Photoluminescence and hall study for the production and recovery of defects in phosphorus implanted ZnO films
Author(s): S. Nagar; B. Sinha; A. Mandal; S. Chakrabarti; S. K. Gupta
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Paper Abstract

ZnO (002) films of thickness 0.5 μm were grown on c-plane sapphire substrates by Pulsed Laser Deposition technique at 400°C in oxygen ambient of 75 mTorr and implanted with 8x1014 cm-2 dose of phosphorus ions of energy 50 keV (Sample A) followed by Rapid Thermal Annealing in Ar (Sample B) and oxygen atmospheres (Sample C) at 750°C (30 seconds). AFM images depicted root-mean-square roughness for Sample A (10.072 nm), B (9.314 nm) and C (4.9 nm). Room-temperature Hall study revealed n-type conductivity with carrier concentrations of 9.69x1019cm-3, 1.36x1020 cm-3, 4x1018 cm-3 and Hall mobility of 0.727 cm2/V-s, 12.44 cm2/V-s, 54.3 cm2/V-s for Sample A, B and C respectively. Possible reasons might be the formation of vacancy clusters by implantation for Sample A, production of oxygen vacancies with agglomeration of vacancy clusters and without further aggregation of vacancy clusters with higher annealing temperature for Sample B and C respectively. Dominance of donor-bound exciton peaks were found to be at 3.295 eV, 3.284 eV, 3.281 eV and 3.272 eV for unimplanted sample, Sample A, B and C respectively from roomtemperature photoluminescence study.

Paper Details

Date Published: 14 March 2011
PDF: 7 pages
Proc. SPIE 7940, Oxide-based Materials and Devices II, 794006 (14 March 2011); doi: 10.1117/12.874006
Show Author Affiliations
S. Nagar, Indian Institute of Technology, Bombay (India)
B. Sinha, Indian Institute of Technology, Bombay (India)
A. Mandal, Indian Institute of Technology, Bombay (India)
S. Chakrabarti, Indian Institute of Technology, Bombay (India)
S. K. Gupta, Bhabha Atomic Research Ctr. (India)


Published in SPIE Proceedings Vol. 7940:
Oxide-based Materials and Devices II
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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