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Proceedings Paper

ZnO ultraviolet photodetectors grown via thermal oxidation of Zn-metal on glass and sapphire substrates
Author(s): J. C. Moore; L. R Covington; R. L. Foster; E. J. Gee; M. R. Jones; S. A. Morris
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Paper Abstract

We have investigated the optical and structural properties of polycrystalline zinc oxide (ZnO) films grown on glass and c-plane sapphire substrates. Zinc-metal films where grown on glass and sapphire substrates via dc-sputter deposition at room temperature with subsequent thermal annealing in air at 300° and 600°C. X-ray diffraction spectra indicate that after annealing, the resulting ZnO films possess a polycrystalline hexagonal wurtzite structure without a preferred orientation. Room-temperature photoluminescence (PL) spectra indicate that films annealed at 300°C exhibited the strongest ultraviolet (UV) emission intensity and lowest deep-level emission. Increasing deep-level green emission was observed with increasing annealing temperature for films grown on glass substrates, and a red shift in the excitonic UV band was observed for films grown on sapphire substrates. ZnO-based metal-semiconductor-metal (MSM) UV photodetectors where fabricated via sputter deposition of aluminum ohmic contacts on the resulting ZnO films. Decreasing photocurrent is seen for increasing annealing temperature, which is consistent with PL studies.

Paper Details

Date Published: 14 March 2011
PDF: 8 pages
Proc. SPIE 7940, Oxide-based Materials and Devices II, 79401L (14 March 2011); doi: 10.1117/12.873837
Show Author Affiliations
J. C. Moore, Coastal Carolina Univ. (United States)
L. R Covington, Coastal Carolina Univ. (United States)
R. L. Foster, Longwood Univ. (United States)
E. J. Gee, Longwood Univ. (United States)
M. R. Jones, Longwood Univ. (United States)
S. A. Morris, Longwood Univ. (United States)

Published in SPIE Proceedings Vol. 7940:
Oxide-based Materials and Devices II
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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