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Proceedings Paper

Ultrafast conditional carrier dynamics in semiconductor quantum dots
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Paper Abstract

We provide direct evidence that the macroscopic response of the gain dynamics in electrically-pumped In- GaAs/GaAs quantum dots is a superposition of intradot relaxation dynamics from microstates with multiple discrete carrier numbers. The gain recovery in the presence of an optical pre-pump fully depleting the ground-state gain is measured to be faster than without pre-pump. This effect, opposite to expectations from rate equations with mean-field carrier distributions, is due to a conditional gain recovery in which microstates with slow internal dynamics are suppressed by the pre-pump. The effect is evident at 15K and still observable at 300 K, beneficial for high-speed optical signal processing.

Paper Details

Date Published: 21 February 2011
PDF: 6 pages
Proc. SPIE 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 793704 (21 February 2011); doi: 10.1117/12.873835
Show Author Affiliations
Paola Borri, Cardiff Univ. (United Kingdom)
Wolfgang Langbein, Cardiff Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 7937:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV
Kong-Thon Tsen; Jin-Joo Song; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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